*Voc.Temp.coef.%/K -0.333%/k
*Isc.Tmp.coef.%/K +0.049%/k
*PmTemp.coef.%/K -0.42%/K
*Intensity Dependence
*Intensity[W/m³] Isc*[mA] Voc*[mV]
1000 1.00 1.000
900 0.90 0.989
500 0.50 0.963
300 0.30 0.939
200 0.20 0.920
*Ratio of Voc(Isc) at reduced intensity to Voc(Isc) at 1000W/m³
*Mechanical Data And Design
*Format 156mm×156mm±0.5mm
*Thickness(Wafer) 180μm±20μm and 200μm±20μm
*Front(-) 1.5mm bus bars(silver), blue anti-reflection coating(silicon nitride)
*Back(+) 2.0mm wide segment soldering *pads(silver),back surface field(aluminium)